| PART |
Description |
Maker |
| 2SC4213 E000917 |
FOR MUTING AND SWITCHING APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)
|
Toshiba Corporation
|
| 2SC2878-A 2SC2878-B |
For Muting and Switching Applications
|
Toshiba Semiconductor
|
| RN1441 RN1444 E002624 |
MUTING AND SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba
|
| L2SA2030M3T5G11 |
Low frequency transistor For switching, for muting.
|
Leshan Radio Company
|
| 2SA1954 2SA195407 |
General Purpose Amplifier Applications Switching and Muting Switch Application
|
Toshiba Semiconductor
|
| 2SC2878 E000769 |
TRANSISTOR (FOR MUTING AND SWITCHING APPLICATIONS) 晶体管（的屏蔽和交换应用
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| 2SC332607 2SC3326 |
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
Toshiba Semiconductor
|
| 2SA1953 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SA1954 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SC3327 2SC3327B |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS
|
TOSHIBA
|
| 2SC5376FV 2SC5376FV-A |
Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications
|
Toshiba Semiconductor
|
| KRC886T KRC881T KRC882T KRC883T KRC884T KRC885T KR |
Built in Bias Resistor
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
(KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR
300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
